The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Feb. 25, 2010
Yoshihiro Sato, Toyama, JP;
Atsuhiro Kajiya, Hyogo, JP;
Yoshihiro Sato, Toyama, JP;
Atsuhiro Kajiya, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes a first MIS transistor formed on a first active region, and a second MIS transistor formed on a second active region. The first MIS transistor includes a first gate insulating film, and a first gate electrode including a first metal film and a first silicon film. The second MIS transistor includes a second gate insulating film, and a second gate electrode including the first metal film, a second metal film, and a second silicon film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile