The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jul. 05, 2011
Yongdon Kim, Hwaseong-si, KR;
Daeshik Kim, Hwaseong-si, KR;
Yongdon Kim, Hwaseong-si, KR;
Daeshik Kim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device comprises a device isolation pattern, an active region, a gate pattern, a first source/drain region, and a first barrier region. The device isolation pattern defines an active portion in a semiconductor substrate and the active portion comprises first and second sidewalls extending in a first direction and doped with a first conductive type dopant. The gate pattern extends in a second direction perpendicular to the first direction to cross over the active portion. The first source/drain region and the first barrier region are disposed in the active portion at one side of the gate pattern. The first barrier region is disposed between the first source/drain region and the first sidewall and contacts the first sidewall. The first barrier region is doped with the first conductive type dopant and the first source/drain region is doped with a second conductive type dopant.