The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Apr. 02, 2012
Hiroshi Furuta, Kanagawa, JP;
Shouzou Uchida, Kanagawa, JP;
Muneaki Matsushige, Kanagawa, JP;
Junji Monden, Kanagawa, JP;
Hiroshi Furuta, Kanagawa, JP;
Shouzou Uchida, Kanagawa, JP;
Muneaki Matsushige, Kanagawa, JP;
Junji Monden, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;
Abstract
A semiconductor integrated circuit device includes a gate electrode of at least one of a P-channel MISFET (metal-insulator-semiconductor field-effect transistor) and an N-channel MISFET provided in a direction parallel to a direction of a well isolation boundary phase between the P-channel MISFET and the N-channel MISFET, a first diffusion layer having a same conductivity type as that of a drain diffusion layer of one of a plurality of ones of the MISFET provided in two regions with a drain diffusion layer of the MISFET therebetween through an isolation respectively in a direction orthogonal to the gate electrode, and a second diffusion layer having a conductivity type different from that of the drain diffusion layer of the one of the plurality of ones of the MISFET provided between the well isolation boundary phase and one of a source diffusion layer and the drain diffusion layer.