The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2013

Filed:

Mar. 16, 2011
Applicants:

Koji Nakahara, Aichi, JP;

Kazuhiro Matsuo, Mie, JP;

Masayuki Tanaka, Kanagawa, JP;

Inventors:

Koji Nakahara, Aichi, JP;

Kazuhiro Matsuo, Mie, JP;

Masayuki Tanaka, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11526 (2013.01); H01L 21/76224 (2013.01); H01L 27/11543 (2013.01); H01L 27/11539 (2013.01); H01L 27/11541 (2013.01);
Abstract

According to one embodiment, a semiconductor substrate includes a cell region and a peripheral circuit region, a first dielectric film is formed on the semiconductor substrate in the cell region and the peripheral circuit region, a first conductive film is formed on the first dielectric film in the cell region and the peripheral circuit region, a first inter-conductive-film dielectric film is formed on the first conductive film in the cell region, a second inter-conductive-film dielectric film is formed on the first conductive film in the peripheral circuit region and a film thickness thereof is larger than the first inter-conductive-film dielectric film, and a second conductive film is formed on the first inter-conductive-film dielectric film in the cell region and the second inter-conductive-film dielectric film in the peripheral circuit region.


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