The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Aug. 26, 2010
Masashi Hayashi, Osaka, JP;
Koichi Hashimoto, Osaka, JP;
Kazuhiro Adachi, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device of the present invention has a semiconductor element regionthat is provided in part of a silicon carbide layerand a guard-ring regionthat is provided in another part of the silicon carbide layersurrounding the semiconductor element regionwhen seen in a direction perpendicular to a principal surface of the silicon carbide layer. The semiconductor device includes: an interlayer insulation filmwhich is provided on the principal surface of the silicon carbide layerin the semiconductor element regionand the guard-ring region, the interlayer insulation filmhaving a relative dielectric constant ofor more; a first protective insulation filmprovided on the interlayer insulation film in the guard-ring region; and a second protective insulation filmprovided on the first protective insulation film, wherein the first protective insulation filmhas a linear expansion coefficient which is between a linear expansion coefficient of a material of the second protective insulation filmand a linear expansion coefficient of a material of the interlayer insulation film