The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jun. 11, 2012
Kenzo Hanawa, Ichihara, JP;
Yasumasa Sasaki, Tokyo, JP;
Kenzo Hanawa, Ichihara, JP;
Yasumasa Sasaki, Tokyo, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Abstract
According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.