The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Mar. 07, 2012
Makoto Miyoshi, Inazawa, JP;
Shigeaki Sumiya, Handa, JP;
Mikiya Ichimura, Ichinomiya, JP;
Sota Maehara, Nagoya, JP;
Mitsuhiro Tanaka, Tsukuba, JP;
Makoto Miyoshi, Inazawa, JP;
Shigeaki Sumiya, Handa, JP;
Mikiya Ichimura, Ichinomiya, JP;
Sota Maehara, Nagoya, JP;
Mitsuhiro Tanaka, Tsukuba, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a buffer layer, and a crystal layer. The buffer layer is formed of a first lamination unit and a second lamination unit being alternately laminated. The first lamination unit includes a composition modulation layer and a first intermediate layer. The composition modulation layer is formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated so that a compressive strain exists therein. The first intermediate layer enhances the compressive strain existing in the composition modulation layer. The second lamination unit is a second intermediate layer that is substantially strain-free.