The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
May. 10, 2011
Hsin-ying Chiu, White Plains, NY (US);
Shu-jen Han, Cortlandt Manor, NY (US);
Hareem T. Maune, San Jose, CA (US);
Hsin-Ying Chiu, White Plains, NY (US);
Shu-Jen Han, Cortlandt Manor, NY (US);
Hareem T. Maune, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Carbon transistor devices having channels formed from carbon nanostructures, such as carbon nanotubes or graphene, and having charged monolayers to reduce parasitic resistance in un-gated regions of the channels, and methods for fabricating carbon transistor devices having charged monolayers to reduce parasitic resistance. For example, a carbon field effect transistor includes a channel comprising a carbon nanostructure formed on an insulating layer, a gate structure formed on the channel, a monolayer of DNA conformally covering the gate structure and a portion of the channel adjacent the gate structure, an insulating spacer conformally formed on the monolayer of DNA, and source and drain contacts connected by the channel.