The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Oct. 14, 2009
Hideyuki Suzuki, Kanagawa, JP;
Tetsuro Mitsui, Kanagawa, JP;
Diago Sawaki, Kanagawa, JP;
Mitsumasa Hamano, Kanagawa, JP;
Masayuki Hayashi, Kanagawa, JP;
Hideyuki Suzuki, Kanagawa, JP;
Tetsuro Mitsui, Kanagawa, JP;
Diago Sawaki, Kanagawa, JP;
Mitsumasa Hamano, Kanagawa, JP;
Masayuki Hayashi, Kanagawa, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
A photoelectric conversion device is provided, the photoelectric conversion device including: a pair of electrodes; a photoelectric conversion layer arranged between the pair of electrodes and containing an n-type organic semiconductor; and a charge blocking layer arranged between one of the pair of electrodes and the photoelectric conversion layer, the charge blocking layer being formed of a single layer or two or more layers, wherein a difference Δ1 between ionization potential Ip of a layer of the charge blocking layer adjacent to the photoelectric conversion layer and electron affinity Ea of the n-type organic semiconductor is at least 1 eV; and the charge blocking layer has a gross thickness of at least 20 nm.