The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2013

Filed:

Dec. 04, 2009
Applicants:

Yoshio Kawashima, Osaka, JP;

Takumi Mikawa, Shiga, JP;

Zhiqiang Wei, Osaka, JP;

Atsushi Himeno, Osaka, JP;

Inventors:

Yoshio Kawashima, Osaka, JP;

Takumi Mikawa, Shiga, JP;

Zhiqiang Wei, Osaka, JP;

Atsushi Himeno, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory element includes a substrate; a lower electrode layer and a resistive layer sequentially formed on the substrate; a resistance variable layer formed on the resistive layer; a wire layer formed above the lower electrode layer; an interlayer insulating layer disposed between the substrate and the wire layer and covering at least the lower electrode layer and the resistive layer, the interlayer insulating layer being provided with a contact hole extending from the wire layer to the resistance variable layer; and an upper electrode layer formed inside the contact hole such that the upper electrode layer is connected to the resistance variable layer and to the wire layer; resistance values of the resistance variable layer changing reversibly in response to electric pulses applied between the lower electrode layer and the upper electrode layer.


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