The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Apr. 09, 2010
Applicant:
Hiroshi Aozasa, Tokyo, JP;
Inventor:
Hiroshi Aozasa, Tokyo, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed herein is a semiconductor memory including: a first MOS transistor having two diffusion layers formed in a semiconductor substrate; a second MOS transistor which is formed in the semiconductor substrate and has one of the two diffusion layers of the first MOS transistor as a common diffusion layer for the first and second MOS transistors; and a variable resistance element which is formed between side wall insulating films formed at respective side walls of a first gate electrode of the first MOS transistor and a second gate electrode of the second MOS transistor and is connected to the common diffusion layer.