The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
May. 18, 2007
Jan Van Der Spiegel, Philadelphia, PA (US);
Viktor Gruev, Philadelphia, PA (US);
Zheng Yang, Philadelphia, PA (US);
Jan Van der Spiegel, Philadelphia, PA (US);
Viktor Gruev, Philadelphia, PA (US);
Zheng Yang, Philadelphia, PA (US);
The Trustees Of The University Of Pennsylvania, Philadelphia, PA (US);
Abstract
A CMOS image sensor that is capable of both voltage- and current-mode operations selects the mode based on the position of mode switches. Each pixel on the imager has a single transistor acting as either source follower for voltage readout, or transconductor for current readout. The two modes share the same readout lines, but have their own correlated double sampling (CDS) units for noise suppression. A current-mode readout technique using a velocity-saturated short-channel transistor may be used to achieve high linearity. An image array may be formed as a mixture of 3 types of pixels with identical photodiodes and access switches. The readout transistors are optimally sized for their designated mode of operation. Alternatively, two readout transistors are provided per pixel, each individually optimized for the desired mode of operation.