The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
May. 18, 2011
Seung Yun Lee, Daejeon, KR;
Young Sam Park, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
Soon Won Jung, Chungcheongbuk-do, KR;
Byoung Gon Yu, Daejeon, KR;
Seung Yun Lee, Daejeon, KR;
Young Sam Park, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
Soon Won Jung, Chungcheongbuk-do, KR;
Byoung Gon Yu, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.