The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Dec. 13, 2010
James A. Culp, Newburgh, NY (US);
John J. Ellis-monaghan, Grand Isle, VT (US);
Jeffrey P. Gambino, Westford, VT (US);
Kirk D. Peterson, Jericho, VT (US);
Jed H. Rankin, Richmond, VT (US);
Christa R. Willets, Jericho, VT (US);
James A. Culp, Newburgh, NY (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Jeffrey P. Gambino, Westford, VT (US);
Kirk D. Peterson, Jericho, VT (US);
Jed H. Rankin, Richmond, VT (US);
Christa R. Willets, Jericho, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming dielectric spacers including providing a substrate comprising a first region having a first plurality of gate structures and a second region having a second plurality of gate structures and at least one oxide containing material or a carbon containing material. Forming a nitride containing layer over the first region having a thickness that is less than the thickness of the nitride containing layer that is present in the second region. Forming dielectric spacers from the nitride containing layer on the first plurality the second plurality of gate structures. The at least one oxide containing material or carbon containing material accelerates etching in the second region so that the thickness of the dielectric spacers in the first region is substantially equal to the thickness of the dielectric spacers in the second region of the substrate.