The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2013

Filed:

Mar. 25, 2010
Applicants:

Beijun Zhong, Shenzhen, CN;

Wenyu Cao, Shenzhen, CN;

Yong Zhou, Shenzhen, CN;

Zhanfeng Jiang, Shenzhen, CN;

Inventors:

Beijun Zhong, Shenzhen, CN;

Wenyu Cao, Shenzhen, CN;

Yong Zhou, Shenzhen, CN;

Zhanfeng Jiang, Shenzhen, CN;

Assignee:

Byd Co., Ltd., Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/469 (2006.01); H01L 21/31 (2006.01); H01L 21/461 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention discloses a method and a device for preparing a compound semiconductor film. The method comprises the steps of: providing a substrate above at least an evaporation source in a vacuum condition; heating a source material contained in the evaporation source so that the source material is vapor-deposited on the substrate; and taking out the substrate under protection of an inert gas. The substrate may be rotated around an axis of a plane where the evaporation source is positioned, and the substrate is tilted by a predetermined angle with respect to the plane. The compound semi-conductive film thus prepared has a uniform thickness with a larger area. The method provides a simplified process and enhanced efficiency.


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