The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Mar. 23, 2011
Yong-don Kim, Hwaseong-si, KR;
Hoon Chang, Hwaseong-si, KR;
Seo-in Pak, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor integrated circuit device and method of fabricating a semiconductor integrated circuit device, the method including preparing a first conductivity type substrate including a first conductivity type impurity such that the first conductivity type substrate has a first impurity concentration; forming a buried impurity layer using blank implant such that the buried impurity layer includes a first conductivity type impurity and has a second impurity concentration higher than the first impurity concentration; forming an epitaxial layer on the substrate having the buried impurity layer thereon; and forming semiconductor devices and a device isolation region in or on the epitaxial layer.