The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Aug. 14, 2009
Applicants:
Teruo Kurahashi, Kawasaki, JP;
Yasuyoshi Mishima, Ebina, JP;
Yukie Sakita, Kawasaki, JP;
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a P-type MOS transistor includes forming a gate insulating film on the substrate, forming a gate electrode from amorphous silicon containing no impurities on the gate insulating film, performing a heat treatment for controlling the film characteristics of the amorphous silicon, depositing a nickel (Ni) layer on the gate electrode, and forming nickel silicides from the gate electrode and the nickel (Ni).