The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jul. 18, 2012
Sun-il Kim, Yongin-si, KR;
Jae-cheol Lee, Suwon-si, KR;
I-hun Song, Seongnam-si, KR;
Young-soo Park, Yongin-si, KR;
Chang-jung Kim, Yongin-si, KR;
Jae-chul Park, Seoul, KR;
Sun-il Kim, Yongin-si, KR;
Jae-cheol Lee, Suwon-si, KR;
I-hun Song, Seongnam-si, KR;
Young-soo Park, Yongin-si, KR;
Chang-jung Kim, Yongin-si, KR;
Jae-chul Park, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.