The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Nov. 08, 2012
Yasuo Ohba, Kanagawa-ken, JP;
Kei Kaneko, Kanagawa-ken, JP;
Toru Gotoda, Kanagawa-ken, JP;
Hiroshi Katsuno, Tokyo, JP;
Mitsuhiro Kushibe, Tokyo, JP;
Yasuo Ohba, Kanagawa-ken, JP;
Kei Kaneko, Kanagawa-ken, JP;
Toru Gotoda, Kanagawa-ken, JP;
Hiroshi Katsuno, Tokyo, JP;
Mitsuhiro Kushibe, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlGaN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.