The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jun. 01, 2011
Kwang Joong Kim, Ansan-si, KR;
Chang Suk Han, Ansan-si, KR;
Seung Kyu Choi, Ansan-si, KR;
Ki Bum Nam, Ansan-si, KR;
Nam Yoon Kim, Ansan-si, KR;
Kyung Hae Kim, Ansan-si, KR;
Ju Hyung Yoon, Ansan-si, KR;
Kwang Joong Kim, Ansan-si, KR;
Chang Suk Han, Ansan-si, KR;
Seung Kyu Choi, Ansan-si, KR;
Ki Bum Nam, Ansan-si, KR;
Nam Yoon Kim, Ansan-si, KR;
Kyung Hae Kim, Ansan-si, KR;
Ju Hyung Yoon, Ansan-si, KR;
Seoul Opto Device Co., Ltd., Ansan-si, KR;
Abstract
Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas.