The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Mar. 01, 2011
Kotaro Zaima, Tokyo, JP;
Toru Gotoda, Yokohama, JP;
Toshiyuki Oka, Yokohama, JP;
Shinya Nunoue, Ichikawa, JP;
Kotaro Zaima, Tokyo, JP;
Toru Gotoda, Yokohama, JP;
Toshiyuki Oka, Yokohama, JP;
Shinya Nunoue, Ichikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate.