The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2013

Filed:

Jun. 17, 2010
Applicants:

Do-hyun Kim, Seongnam-si, KR;

Kyoung-jae Chung, Seoul, KR;

Seung-ha Choi, Suwon-si, KR;

Dong-hoon Lee, Seoul, KR;

Chang-oh Jeong, Suwon-si, KR;

Suk-won Jung, Goyang-si, KR;

Inventors:

Do-Hyun Kim, Seongnam-si, KR;

Kyoung-Jae Chung, Seoul, KR;

Seung-Ha Choi, Suwon-si, KR;

Dong-Hoon Lee, Seoul, KR;

Chang-Oh Jeong, Suwon-si, KR;

Suk-Won Jung, Goyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor array panel includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a gate insulating layer disposed on the gate line; an semiconductive oxide layer disposed on the gate insulating layer; a data line disposed on the semiconductive oxide layer and including a source electrode; a drain electrode facing the source electrode on the semiconductive oxide layer; and a passivation layer disposed on the data line. The semiconductive oxide layer is patterned with chlorine (Cl) containing gas which alters relative atomic concentrations of primary semiconductive characteristic-providing elements of the semiconductive oxide layer at least at a portion where a transistor channel region is defined.


Find Patent Forward Citations

Loading…