The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
May. 05, 2010
Luigi Colombo, Dallas, TX (US);
Xuesong LI, Austin, TX (US);
Rodney S. Ruoff, Austin, TX (US);
Board of Regents, The University of Texas System, Austin, TX (US);
Texas Instruments, Inc., Dallas, TX (US);
Abstract
Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.