The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Apr. 30, 2008
Junichi Fujikata, Tokyo, JP;
Jun Ushida, Tokyo, JP;
Daisuke Okamoto, Tokyo, JP;
Kenichi Nishi, Tokyo, JP;
Keishi Ohashi, Tokyo, JP;
Tai Tsuchizawa, Kanagawa, JP;
Seiichi Itabashi, Kanagawa, JP;
Junichi Fujikata, Tokyo, JP;
Jun Ushida, Tokyo, JP;
Daisuke Okamoto, Tokyo, JP;
Kenichi Nishi, Tokyo, JP;
Keishi Ohashi, Tokyo, JP;
Tai Tsuchizawa, Kanagawa, JP;
Seiichi Itabashi, Kanagawa, JP;
NEC Corporation, Tokyo, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.