The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Jan. 17, 2012
Albert Ratnakumar, San Jose, CA (US);
Shuang Xie, Cupertino, CA (US);
Cheng-hsiung Huang, Cupertino, CA (US);
Yow-juang Bill Liu, San Jose, CA (US);
Albert Ratnakumar, San Jose, CA (US);
Shuang Xie, Cupertino, CA (US);
Cheng-Hsiung Huang, Cupertino, CA (US);
Yow-Juang Bill Liu, San Jose, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
Nonvolatile memory element circuitry is provided that is based on metal-oxide-semiconductor transistor structures. A nonvolatile memory element may be based on a metal-oxide-semiconductor transistor structure that has a gate, a drain, a source, and a body. During programming operations, control circuitry floats the body while applying a positive voltage to the drain and a negative voltage to the source. This causes the drain and source, which serve as the collector and emitter in a parasitic bipolar transistor, to break down. The drain-to-source (collector-to-emitter) breakdown causes sufficient current to flow through the source to alter the source electrode and thereby increase the resistance of the source significantly. During sensing operations, control circuitry may apply a voltage across the drain and source while grounding the body to determine whether the memory element has been programmed.