The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Apr. 08, 2011
David R. Helms, Tyngsboro, MA (US);
John Ditri, Huntingdon Valley, PA (US);
Stuart R. Ducker, Hainesport, NJ (US);
Dana J. Sturzebecher, Cary, NC (US);
David R. Helms, Tyngsboro, MA (US);
John Ditri, Huntingdon Valley, PA (US);
Stuart R. Ducker, Hainesport, NJ (US);
Dana J. Sturzebecher, Cary, NC (US);
Lockheed Martin Corporation, Bethesda, MD (US);
Abstract
An integrated circuit comprises a GaAs substrate thermally and mechanically mounted on a SiC substrate. The GaAs substrate is doped to define first and second transistors. Circuit conductors are defined on the GaAs substrate, which conductors interconnect the source of the first transistor to neutral and the drain to the source of the second transistor. Conductors connect the gate of the second transistor to neutral, to define a cascode amplifier. The SiC substrate supports first and second matching circuits, one of which is connected to the gate of the first transistor, and the other of which is connected to the drain of the second transistor.