The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2013

Filed:

Jan. 06, 2012
Applicants:

Yoon Ha Jeong, Pohang-si, KR;

Mun Woo Lee, Daegu-si, KR;

Sang Ho Kam, Gimhae-si, KR;

Inventors:

Yoon Ha Jeong, Pohang-si, KR;

Mun Woo Lee, Daegu-si, KR;

Sang Ho Kam, Gimhae-si, KR;

Assignee:

Postech Academy-Industry Foundation, Pohang-Si, Gyeongsangbuk-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/68 (2006.01);
U.S. Cl.
CPC ...
Abstract

A three-stage GaN HEMT Doherty power amplifier for high frequency applications includes: a carrier amplifier; first and second peaking amplifier; a 10-dB power divider configured to divide an input signal to the carrier amplifier and the first and second peaking amplifiers; a first path for controlling input power of the carrier amplifier; and a second path for maintaining an efficiency of 40% or more in an output range of 40 dBm to 50 dBm.


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