The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2013

Filed:

Aug. 12, 2011
Applicants:

Peter J. Hopper, San Jose, CA (US);

William French, San Jose, CA (US);

Ann Gabrys, Santa Clara, CA (US);

Martin Fallon, Glasgow, GB;

Inventors:

Peter J. Hopper, San Jose, CA (US);

William French, San Jose, CA (US);

Ann Gabrys, Santa Clara, CA (US);

Martin Fallon, Glasgow, GB;

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

The spikes in current and voltage that result from the failure of a galvanic dielectric layer are safely contained by a galvanic isolation fuse that pops and forms and open circuit between a high-voltage die and a low-voltage die in response to the failure of the galvanic dielectric layer.


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