The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2013

Filed:

Mar. 26, 2010
Applicants:

Shingo Furui, Higashiosaka, JP;

Toshinori Yoshimuta, Takatsuki, JP;

Junichi Suzuki, Kyoto, JP;

Koji Watadani, Kyoto, JP;

Satoru Morita, Takatsuki, JP;

Inventors:

Shingo Furui, Higashiosaka, JP;

Toshinori Yoshimuta, Takatsuki, JP;

Junichi Suzuki, Kyoto, JP;

Koji Watadani, Kyoto, JP;

Satoru Morita, Takatsuki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 271/46 (2006.01);
U.S. Cl.
CPC ...
Abstract

The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate laminated in this order. In one aspect of the present invention, the insulating layer has an inorganic anion exchanger added thereto in order to provide a radiation detector which prevents void formation and pinhole formation in the amorphous semiconductor layer and carrier selective high resistance film, without accumulating electric charges on the auxiliary plate. The inorganic anion exchanger adsorbs chloride ions in the insulating layer, thereby preventing destruction of X-ray detector due to the chloride ions drawn to the gold electrode layer.


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