The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Jun. 23, 2009
Daisuke Okamoto, Tokyo, JP;
Junichi Fujikata, Tokyo, JP;
Daisuke Okamoto, Tokyo, JP;
Junichi Fujikata, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
Provided is a high-speed and highly efficient semiconductor light-receiving element with small dependence on an incident light polarization direction. A semiconductor light-receiving element according to one aspect of the present invention includes a semiconductor layer including a light-absorbing layer, an MSM electrodethat is provided over the semiconductor layer, forms a Schottky junction with the semiconductor layer, and includes a slit-like opening, an anti-reflective filmformed over the semiconductor layer and the MSM electrode, and a Bragg reflection multilayer filmprovided to a lower part of the semiconductor layer. The MSM electrodeincludes a period capable of exciting surface plasmon to incident light of TM polarization, and obtains sufficient transmittance to the incident light of TE polarization.