The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Mar. 03, 2011
Yuankai Zheng, Fremont, CA (US);
Xiaohua Lou, Milpitas, CA (US);
Haiwen Xi, San Jose, CA (US);
Michael Xuefei Tang, Bloomington, MN (US);
Yuankai Zheng, Fremont, CA (US);
Xiaohua Lou, Milpitas, CA (US);
Haiwen Xi, San Jose, CA (US);
Michael Xuefei Tang, Bloomington, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.