The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Mar. 23, 2009
Jong-han Jeong, Suwon-si, KR;
Tae-kyung Ahn, Suwon-si, KR;
Jae-kyeong Jeong, Suwon-si, KR;
Jin-sung Park, Suwon-si, KR;
Hun-jung Lee, Suwon-si, KR;
Hyun-soo Shin, Suwon-si, KR;
Yeon-gon MO, Suwon-si, KR;
Jong-Han Jeong, Suwon-si, KR;
Tae-Kyung Ahn, Suwon-si, KR;
Jae-Kyeong Jeong, Suwon-si, KR;
Jin-Sung Park, Suwon-si, KR;
Hun-Jung Lee, Suwon-si, KR;
Hyun-Soo Shin, Suwon-si, KR;
Yeon-Gon Mo, Suwon-si, KR;
Samsung Display Co., Ltd., Giheung-Gu, Yongin, Gyeonggi-Do, KR;
Abstract
Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.