The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2013

Filed:

Feb. 11, 2009
Applicants:

Hyun-joong Chung, Suwon-si, KR;

Min-kyu Kim, Suwon-si, KR;

Jong-han Jeong, Suwon-si, KR;

Yeon-gon MO, Suwon-si, KR;

Inventors:

Hyun-Joong Chung, Suwon-si, KR;

Min-Kyu Kim, Suwon-si, KR;

Jong-Han Jeong, Suwon-si, KR;

Yeon-Gon Mo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes. The active layer includes contact regions that contact the source and drain electrodes, which are thinner than a remaining region of the active layer. The contact regions reduce the contact resistance between the active material layer and the source and drain electrodes.


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