The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Nov. 28, 2007
Sun-ae Seo, Hwaseong-si, KR;
Young-soo Park, Yongin-si, KR;
Ran-ju Jung, Suwon-si, KR;
Myoung-jae Lee, Suwon-si, KR;
Dong-chul Kim, Suwon-si, KR;
Seung-eon Ahn, Suwon-si, KR;
Sun-ae Seo, Hwaseong-si, KR;
Young-soo Park, Yongin-si, KR;
Ran-ju Jung, Suwon-si, KR;
Myoung-jae Lee, Suwon-si, KR;
Dong-chul Kim, Suwon-si, KR;
Seung-eon Ahn, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path.