The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Apr. 11, 2011
Soo Min Lee, Seoul, KR;
Hee Seok Park, Gyunggi-do, KR;
Jae Woong Han, Seoul, KR;
Seong Suk Lee, Gyunggi-do, KR;
Cheol Soo Sone, Gyunggi-do, KR;
Soo Min Lee, Seoul, KR;
Hee Seok Park, Gyunggi-do, KR;
Jae Woong Han, Seoul, KR;
Seong Suk Lee, Gyunggi-do, KR;
Cheol Soo Sone, Gyunggi-do, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Abstract
There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.