The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8466425 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 18, 2013

Filed:

Sep. 29, 2011
Applicants:

Maria Mitkova, Boise, ID (US);

Darryl P. Butt, Boise, ID (US);

Inventors:

Maria Mitkova, Boise, ID (US);

Darryl P. Butt, Boise, ID (US);

Assignee:

Boise State University, Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/26 (2006.01); H01L 31/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A chalcogenide glass radiation sensor comprising a chalcogenide glass layer coupled to at least two electrodes and a metal source, and a method using the same are disclosed. The chalcogenide glass layer has a resistivity and the at least two electrodes are configured to facilitate the measurement of the resistivity of the chalcogenide glass layer. The coupling of the metal source and the chalcogenide glass layer is such that the resistivity of the chalcogenide glass layer changes upon exposure to ionizing radiation. The metal source is configured to be external to an electric field that may form between the at least two electrodes as the resistivity of the chalcogenide glass layer is measured.


Find Patent Forward Citations

Mitkova, Maria. (2013). Chalcogenide glass ionizing radiation sensor (U.S. Patent No. 8466425). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8466425

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