The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Sep. 23, 2010
Stefan Kolb, Unterschleissheim, DE;
Bernhard Winkler, Regensburg, DE;
Ivo Rangelow, Baunatal, DE;
Hans-olof Blom, Uppsala, SE;
Johan Bjurstroem, Uppsala, SE;
Stefan Kolb, Unterschleissheim, DE;
Bernhard Winkler, Regensburg, DE;
Ivo Rangelow, Baunatal, DE;
Hans-Olof Blom, Uppsala, SE;
Johan Bjurstroem, Uppsala, SE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for forming a through via in a semiconductor element includes providing a semiconductor element having electronic circuitry integrated on the main side thereof. The semiconductor element further includes an etch stop layer and a conductive region, wherein the conductive region is arranged between the etch stop layer and the main side of the semiconductor element. The method also includes selectively etching a through via from a backside of the semiconductor element, opposite to the main side of the semiconductor element, to the etch stop layer and removing at least partly the etch stop layer, so that the conductive region is exposed to the backside and filling at least partly the through via with a conductive material, wherein the conductive material is electrically isolated from the semiconductor element.