The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Jul. 25, 2006
Yasuhiro Inokuchi, Toyama, JP;
Atsushi Moriya, Toyama, JP;
Katsuhiko Yamamoto, Himi, JP;
Yoshiaki Hashiba, Takaoka, JP;
Takashi Yokogawa, Toyama, JP;
Yasuhiro Inokuchi, Toyama, JP;
Atsushi Moriya, Toyama, JP;
Katsuhiko Yamamoto, Himi, JP;
Yoshiaki Hashiba, Takaoka, JP;
Takashi Yokogawa, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, unknown;
Abstract
Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing.