The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Mar. 09, 2010
Yoshiyuki Itoh, Osaka, JP;
Masashi Maekawa, Osaka, JP;
Norihisa Asano, Osaka, JP;
Hiroki Taniyama, Osaka, JP;
Yoshiyuki Itoh, Osaka, JP;
Masashi Maekawa, Osaka, JP;
Norihisa Asano, Osaka, JP;
Hiroki Taniyama, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Disclosed is a semiconductor device which includes a substrate, a thin film transistorhaving a first semiconductor layerA that is supported by the substrate, a thin film diodehaving a second semiconductor layerB that is supported by the substrate, and a metal layerthat is formed between the substrateand the second semiconductor layerB. The first semiconductor layerA is a laterally grown crystalline semiconductor film, and the second semiconductor layerB is a crystalline semiconductor film that contains fine crystal grains. The average surface roughness of the second semiconductor layerB is higher than the average surface roughness of the first semiconductor layerA. Consequently, the optical sensitivity of the TFD is improved and the reliability of the TFT is improved, as compared with those in the conventional semiconductor devices.