The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8466033 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 18, 2013

Filed:

Mar. 21, 2011
Applicants:

Po-min Tu, Hsinchu, TW;

Shih-cheng Huang, Hsinchu, TW;

Shun-kuei Yang, Hsinchu, TW;

Chia-hung Huang, Hsinchu, TW;

Inventors:

Po-Min Tu, Hsinchu, TW;

Shih-Cheng Huang, Hsinchu, TW;

Shun-Kuei Yang, Hsinchu, TW;

Chia-Hung Huang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light emitting diode comprises a substrate, a buffer layer, a semiconductor layer and a semiconductor light emitting layer. The buffer layer is disposed on the substrate. The semiconductor layer is disposed on the buffer layer. The semiconductor light emitting layer is disposed on the semiconductor layer. A plurality of voids is defined within the semiconductor layer. Each void encloses air therein. A method for manufacturing the light emitting diode is also provided. Light generated by the semiconductor light emitting layer toward the substrate is reflected by the voids to emit out of the light emitting diode.


Find Patent Forward Citations

Tu, Po-Min. (2013). Light emitting diode and manufacturing method thereof (U.S. Patent No. 8466033). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8466033

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