The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Apr. 06, 2010
Hiroyuki Kaigawa, Osaka, JP;
Hiroyuki Kaigawa, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Provided is a method of manufacturing a semiconductor device which can form a high-performance photodiode in which variation in output characteristics and performance deterioration are suppressed. A prescribed gate metal is used to form a shield sectionthat covers a portion of a first semiconductor layerfor a photodiode that becomes an intrinsic semiconductor region on a gate insulating filmand to form first to fourth gate electrodestothat cover portions of respective second to fifth semiconductor layerstofor thin film transistors that become channel regions on the gate insulating film. Then, using the shield sectionas a mask, an n-type region and p-type region are formed in the first semiconductor layer. Then, the shield sectionis removed.