The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Jun. 29, 2011
Jonathan Phillip Singer, Media, PA (US);
Jae-hwang Lee, Chestnut Hill, MA (US);
Steven E. Kooi, Lexington, MA (US);
Edwin Lorimer Thomas, Natick, MA (US);
Jonathan Phillip Singer, Media, PA (US);
Jae-Hwang Lee, Chestnut Hill, MA (US);
Steven E. Kooi, Lexington, MA (US);
Edwin Lorimer Thomas, Natick, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
Lithographic Method. The method fabricates complex structures and includes depositing a photoresist onto a substrate, the photoresist including a predominantly thermal band of optical absorption possibly due to the incorporation of a doping agent. A three-dimensional pattern is generated within the resist using a first wavelength of light to effect activation of a photoinitiator to produce a latently photostructured resist. Focused laser spike annealing of the photostructured resist with a second wavelength of light selected to be absorbed by the thermally absorbing band to accelerate the photoinduced reaction in the resist is provided. Three-dimensional direct writing may be performed within the resist to define features not part of the interference pattern and the resist is developed to produce the complex structure.