The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Sep. 21, 2010
Jung Hun Lim, Daejeon, KR;
Dae Hyun Kim, Gongju-si, KR;
Chang Jin Yoo, Gongju-si, KR;
Seong Hwan Park, Cheongju-si, KR;
Jung Hun Lim, Daejeon, KR;
Dae Hyun Kim, Gongju-si, KR;
Chang Jin Yoo, Gongju-si, KR;
Seong Hwan Park, Cheongju-si, KR;
Techno Semichem Co., Ltd., Seongnam-si, KR;
Abstract
Provided is an etching composition for electively removing silicon dioxide at a high etch rate, more particularly, a composition for wet etching of silicon dioxide, including 1 to 40 wt % of hydrogen fluoride (HF); 5 to 40 wt % of ammonium hydrogen fluoride (NHHF); and water, and further including a surfactant to improve selectivity of the silicon dioxide and a silicon nitride film. Since the composition for wet etching of silicon dioxide has the high etch selectivity of the silicon dioxide to the silicon nitride film, it is useful for selectively removing silicon dioxide.