The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Feb. 05, 2010
Prem Nath, Fort Lauderdale, FL (US);
Venugopala R. Basava, Highlands Ranch, CO (US);
Ajay Kumar Kalla, Centennial, CO (US);
Peter Alex Shevchuk, Arvada, CO (US);
Mohan S. Misra, Golden, CO (US);
Prem Nath, Fort Lauderdale, FL (US);
Venugopala R. Basava, Highlands Ranch, CO (US);
Ajay Kumar Kalla, Centennial, CO (US);
Peter Alex Shevchuk, Arvada, CO (US);
Mohan S. Misra, Golden, CO (US);
Ascent Solar Technologies, Inc., Thornton, CO (US);
Abstract
A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS.