The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Jul. 01, 2011
Applicants:
Christiane Poblenz, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Derrick S. Kamber, Goleta, CA (US);
Inventors:
Christiane Poblenz, Goleta, CA (US);
James S. Speck, Goleta, CA (US);
Derrick S. Kamber, Goleta, CA (US);
Assignee:
SORAA, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.