The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2013

Filed:

Sep. 01, 2010
Applicants:

Shinji Matsuo, Atsugi, JP;

Takaaki Kakitsuka, Atsugi, JP;

Masaya Notomi, Atsugi, JP;

Akihiko Shinya, Atsugi, JP;

Inventors:

Shinji Matsuo, Atsugi, JP;

Takaaki Kakitsuka, Atsugi, JP;

Masaya Notomi, Atsugi, JP;

Akihiko Shinya, Atsugi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The objective of the invention is to provide a photonic crystal device which enables efficient confinement of carriers while preventing the deterioration of device characteristics. Specifically a photonic crystal device has a photonic crystal in which media with different refractive indexes are regularly arranged, wherein an active region () includes an active layer () and carrier confinement layers () provided on the top and bottom of the active layer () respectively for confining carriers. The photonic crystal is formed by a buried growth layer () with a larger bandgap than that of the active region ().


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