The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Aug. 09, 2006
Kazushi Wada, Kanagawa, JP;
Kazushi Wada, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
At a transfer electrode to which a normally low transfer pulse is applied, the time period in which the negative potential is applied is long, and an electric field is applied to a gate insulating film, such that the device's reliability decreases. To overcome this drawback, a negative side potential (VL') of a normally low vertical transfer pulse (Vφ, Vφ) is set smaller in the absolute value than a negative side potential (VL) of a normally high vertical transfer pulse (Vφ, Vφ). Thereby, while the influence of increase in the dark current is being suppressed, the electric field being applied to the gate insulating film is reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile