The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2013

Filed:

Aug. 16, 2011
Applicants:

Martin J. Gasper, Zionsville, PA (US);

Gerard M. Blair, Bath, PA (US);

Bruce E. Zahn, Allentown, PA (US);

Inventors:

Martin J. Gasper, Zionsville, PA (US);

Gerard M. Blair, Bath, PA (US);

Bruce E. Zahn, Allentown, PA (US);

Assignee:

LSI Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 11/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

Described embodiments provide a delay cell for a complementary metal oxide semiconductor integrated circuit. The delay cell includes a delay stage to provide an output signal having a programmable delay through the delay cell. The delay cell has a selectable delay value from a plurality of delay values, where the cell size and terminal layout of the delay cell are relatively uniform for the plurality of delay values. The delay stage includes M parallel-coupled inverter stages. Each parallel-coupled inverter stage includes N pairs of stacked PMOS transistors and stacked NMOS transistors. The N transistor pairs have configurable source-drain node connections between a drain node and a source node of each transistor in the pair, wherein the selectable delay value corresponds to a configuration of the configurable source-drain node connections to adjust a delay value of each of the M inverter stages.


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