The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Jun. 30, 2010
Phillip Celaya, Gilbert, AZ (US);
Yeu Wen Lee, Negeri Sembilan, MY;
Weng Onn Low, Negeri Sembilan, MY;
Virgilio Abalos, Jr., Phoenix, AZ (US);
Jamieson Wardall, Gilbert, AZ (US);
Phillip Celaya, Gilbert, AZ (US);
Yeu Wen Lee, Negeri Sembilan, MY;
Weng Onn Low, Negeri Sembilan, MY;
Virgilio Abalos, Jr., Phoenix, AZ (US);
Jamieson Wardall, Gilbert, AZ (US);
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component is configured to permit the determination of circuit parameters. A high side FET has a gate terminal coupled to an output terminal of a high side gate drive circuit, a drain terminal coupled for receiving an input voltage, and a source terminal coupled to the drain terminal of a low side FET. The gate terminal of the low side FET is coupled to the output terminal of low side drive circuit and the source terminal of the low side FET is coupled for receiving a source of operating potential. The high side gate drive circuit has a bias terminal coupled for receiving a floating potential where the bias terminal is electrically isolated or decoupled from the commonly connected source and drain terminals of the high side FET and the low side FET, respectively.