The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2013

Filed:

Mar. 21, 2011
Applicants:

Jeong-hwan Kim, Yongin, KR;

Joung-keun Park, Yongin, KR;

Jae-hyuk Jang, Yongin, KR;

Inventors:

Jeong-Hwan Kim, Yongin, KR;

Joung-Keun Park, Yongin, KR;

Jae-Hyuk Jang, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor includes a substrate; a gate electrode on the substrate; a gate insulating layer covering the gate electrode; a semiconductor layer corresponding to the gate electrode on the gate insulating layer; a protective layer covering the semiconductor layer and the gate insulating layer and having a source contact hole and a drain contact hole exposing a portion of the semiconductor layer; and a source electrode and a drain electrode on the protective layer and coupled to the semiconductor layer through the source contact hole and the drain contact hole, respectively, wherein the semiconductor layer has a source offset groove at a portion corresponding to the source contact hole of the protective layer.


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